A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHz

Abstract

The authors report the DC characteristics and RF performances of a 50*0.2- mu m/sup 2/ AlGaAs/InGaAs/GaAs pseudomorphic HEMT with a doped InGaAs channel. A transconductance as high as 760 mS/mm and a maximum current density of 800 mA/mm leads to a power density of 0.85 W/mm with 3.3-dB gain and 22.1% power-added efficiency at 55 GHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>