International Journal of Electronics · 2013 · 43 citations · 14 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsSemiconductor PhysicsField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingPoisson EquationPoisson Equation ModelsPoisson's EquationSilicon-on-insulator TechnologySurface PotentialTunneling Field-effect Transistors
AbstractIn this article, a new two-dimensional (2-D) analytical model of the single-gate (SG) silicon-on-insulator (SOI) tunnel field effect transistors (TFETs) is proposed. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. Analytical expressions for surface potential and electric field are derived. The validity of the proposed model is tested for device scaled to 18-nm length and the analytical results are compared with Technology Computer Aided Design (TCAD) simulations.Keywords: tunnel field effect transistorband-to-band tunnellinganalytical modellingPoisson's equationssurface potentialelectric field
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