Amorphization, recrystallization and end of range defects in germanium

A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark · Nuclear Instruments and Methods · 1980 · 4.7K citations

Engineering, Materials Science, Physics +16

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

Engineering, Materials Engineering, Materials Science +17

Nanoscale holographic interferometry for strain measurements in electronic devices

Martin Hÿtch, Florent Houdellier, F. Hüe et al. · Nature · 2008 · 460 citations

Natural Sciences, Materials Engineering, Materials Science +16

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

E. P. Donovan, F. Spaepen, David Turnbull et al. · Journal of Applied Physics · 1985 · 410 citations

Natural Sciences, Materials Engineering, Materials Science +17

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

Natural Sciences, Materials Science, Physics +13