A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark

Nuclear Instruments and Methods

EngineeringPhysicsNatural SciencesApplied PhysicsAtomic Physics +9

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann, +1

Applied Physics Letters

SemiconductorsEngineeringCrystalline DefectsPhysicsDefect Evaporation +10

Nanoscale holographic interferometry for strain measurements in electronic devices

Martin Hÿtch, Florent Houdellier, F. Hüe, +1

Nature

HolographyEngineeringPhysicsMicroscopyNanotechnology +6

Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantation

E. P. Donovan, F. Spaepen, David Turnbull, +2

Journal of Applied Physics

Materials ScienceAmorphous SiNoble GasEngineeringIon Implantation +11

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk, +6

Physical Review Letters

EngineeringSilicon On InsulatorDefect ToleranceCluster Formation EnergySilicene +15

Activation and diffusion studies of ion-implanted p and n dopants in germanium

Chi On Chui, Kailash Gopalakrishnan, Peter B. Griffin, +2

Applied Physics Letters

EngineeringOptoelectronic DevicesSemiconductor DeviceIon ImplantationElectronic Devices +16

Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium

S. Brotzmann, H. Bracht

Journal of Applied Physics

Rare Earth MineralEngineeringExtrinsic DiffusionActive DopantsChemistry +18

Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium

Martin Werner, H. Mehrer, H. D. Hochheimer

Physical review. B, Condensed matter

Materials ScienceHydrostatic PressureEngineeringDiffusion ResistanceCrystalline Defects +11

Ostwald ripening of end-of-range defects in silicon

Caroline Bonafos, D. Mathiot, A. Claverie

Journal of Applied Physics

Materials ScienceActivation EnergyPoint DefectsEngineeringCrystalline Defects +11

Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals

L. Csepregi, R. Philip Kullen

Solid State Communications

Materials ScienceMaterials EngineeringMaterial AnalysisGe CrystalsEngineering +8