Applied Physics Letters · 2012 · 16 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCurrent-voltage RelationsDiode Current-voltage CharacteristicsJunction Ideality FactorSchottky Barrier CharacteristicsSchottky Barrier DiodesSchottky BarriersSchottky ContactsTemperature Dependence
The temperature dependence of the current-voltage characteristics of Ni-InGaAs alloy Schottky contacts to n-In0.53Ga0.47As was measured. Nearly ideal plots with an ideality factor close to unity were obtained. The Arrhenius curve across the wide temperature range of 80–300 K was perfectly linear, yielding a barrier height of 0.239 ± 0.01 eV. This value is substantially larger than previously reported. Conventional metal based Schottky diodes did not exhibit an ideal Schottky behavior. The ideal Schottky diode characteristics are attributed to the lack of oxidation and contamination of the interface between Ni-InGaAs and InGaAs.
7
Origin of the Excess Capacitance at Intimate Schottky Contacts
J. H. Werner, A. F. J. Levi, R. T. Tung et al. · Physical Review Letters · 1988 · 220 citations
Sanghyeon Kim, Masafumi Yokoyama, Noriyuki Taoka et al. · Applied Physics Express · 2011 · 60 citations