J. H. Werner

Origin of the Excess Capacitance at Intimate Schottky Contacts

J. H. Werner, A. F. J. Levi, R. T. Tung et al. · Physical Review Letters · 1988 · 219 citations

Electrical Engineering, Excess Capacitance, Engineering +14

Exponential band tails in polycrystalline semiconductor films

J. H. Werner, M. Peisl · Physical review. B, Condensed matter · 1985 · 120 citations

Semiconductors, Semiconductor Device, Engineering +10

High-quality surface passivation by corona-charged oxides for semiconductor surface characterization

M. Schöfthaler, Rolf Brendel, G. Langguth et al. · 2002 · 41 citations

Engineering, High-quality Surface Passivation, Silicon On Insulator +17

Density of states of grain boundaries in silicon

J. H. Werner, W. Jantsch, H. J. Queisser · Solid State Communications · 1982 · 35 citations

Grain Boundaries, Engineering, Physics +6

Fabrication of Single Crystalline SiC Layer on High Temperature Glass

Qiaoling Tong, T.‐H. Lee, P. Werner et al. · Journal of The Electrochemical Society · 1997 · 18 citations

Materials Science, Materials Engineering, Sic Wafers +14