A. Gavrilov - Concepedia

Author

A. Gavrilov

Technion – Israel Institute of Technology

Also Known As

A Gavrilov, A. Gavrilov, A.V Gavrilov, A.V. Gavrilov, Arkady Gavrilov

Publications

357

Citations

H-Index

Concepts

All Affiliations

Technion – Israel Institute of Technology

About

A. Gavrilov is an author at Technion – Israel Institute of Technology specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	269
2	Applied Physics	10	11	269
3	Electrical Engineering	10	11	269
4	Materials Science	6	6	154
5	Materials Engineering	3	3	81

A. Gavrilov

Publications

279

Citations

H-Index

Page 1

	Year	Citations
Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces Igor Krylov, Lior Kornblum, A. Gavrilov, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2012	45
Resistive Switching in $\hbox{HfO}_{2}$ Probed by a Metal–Insulator–Semiconductor Bipolar Transistor Eilam Yalon, A. Gavrilov, Shimon Cohen, IEEE Electron Device Letters EngineeringSemiconductor PhysicsSemiconductor MaterialsSemiconductor DeviceSemiconductors	2011	36
Evaluation of the local temperature of conductive filaments in resistive switching materials Eilam Yalon, Shimon Cohen, A. Gavrilov, Nanotechnology Local TemperatureEngineeringPhase Change MemoryConductive FilamentsThermal Conductivity	2012	34
Shadowing and mask opening effects during selective-area vapor–liquid–solid growth of InP nanowires by metalorganic molecular beam epitaxy Alexander Kelrich, Yonatan Calahorra, Yaakov Greenberg, Nanotechnology EngineeringNanowire Growth RateNanoelectronicsSelective-area Vapor–liquid–solid GrowthGrowth Rate	2013	32
Indium outdiffusion and leakage degradation in metal/Al2O3/In0.53Ga0.47As capacitors Igor Krylov, A. Gavrilov, M. Eizenberg, Applied Physics Letters Aluminium NitrideEngineeringNi/al2o3/ingaas Structures ResultsDefect ToleranceIon Implantation	2013	31
Correlation between Ga-O signature and midgap states at the Al<sub>2</sub>O<sub>3</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As interface Igor Krylov, A. Gavrilov, M. Eizenberg, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorEngineeringNh4oh ConcentrationsMidgap States	2012	31
Measurement of the Schottky barrier height between Ni-InGaAs alloy and In0.53Ga0.47As Shlomo Mehari, A. Gavrilov, Shimon Cohen, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSchottky Barrier HeightEngineering	2012	16
An abrupt InP-GaInAs-InP DHBT D. Cohen-Elias, S. Kraus, A. Gavrilov, IEEE Electron Device Letters SemiconductorsN-type Inp LayerElectrical EngineeringElectronic DevicesEngineering	2004	12
Density of Traps at the Insulator/III-N Interface of GaN Heterostructure Field-Effect Transistors Obtained by Gated Hall Measurements Shlomo Mehari, A. Gavrilov, M. Eizenberg, IEEE Electron Device Letters SemiconductorsTrap DistributionElectrical EngineeringWide-bandgap SemiconductorInsulator/iii-n Interface	2015	11
75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation E. Cohen, Y. Betser, Benny Sheinman, IEEE Transactions on Electron Devices Electrical EngineeringRecord FiguresGhz Inp HbtEmitter FollowerEngineering	2006	11

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