Structural Properties of Doped GaN on Si(111) Studied by X-Ray Diffraction Techniques

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon

Ting Lei, M. Fanciulli, R. J. Molnar et al. · Applied Physics Letters · 1991 · 371 citations

Engineering, Materials Engineering, Materials Science +17

High quality AIN and GaN epilayers grown on (00⋅1) sapphire, (100), and (111) silicon substrates

Patrick Kung, A. Saxler, X. Zhang et al. · Applied Physics Letters · 1995 · 166 citations

Engineering, Materials Engineering, Materials Science +14

Growth of AlN films on Si (100) and Si (111) substrates by reactive magnetron sputtering

J.X. Zhang, Hao Cheng, Y.Z. Chen et al. · Surface and Coatings Technology · 2004 · 140 citations

Natural Sciences, Materials Engineering, Materials Science +14

Growth of aluminum nitride on (111) silicon: Microstructure and interface structure

A. Bourret, A. Barski, Jean‐Luc Rouvière et al. · Journal of Applied Physics · 1998 · 107 citations

Natural Sciences, Materials Engineering, Materials Science +17

Microstructure and photoluminescence of GaN grown on Si(111) by plasma-assisted molecular beam epitaxy

Akira Ohtani, K. S. Stevens, R. Beresford · Applied Physics Letters · 1994 · 105 citations

Engineering, Materials Science, Physics +17