Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Substrates for gallium nitride epitaxy

L. Liu, James H. Edgar · Materials Science and Engineering R Reports · 2002 · 809 citations

Engineering, Materials Engineering, Materials Science +12

The estimation of dislocation densities in metals from X-ray data

Peter Gay, P. B. Hirsch, Anthony E. Kelly · Acta Metallurgica · 1953 · 520 citations

Natural Sciences, Materials Engineering, Materials Science +14

Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and <i>c</i>-plane sapphire

Degang Zhao, Shijie Xu, Mingyu Xie et al. · Applied Physics Letters · 2003 · 420 citations

Engineering, Materials Engineering, Materials Science +17

Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition

S. Heikman, S. Keller, Steven P. DenBaars et al. · Applied Physics Letters · 2002 · 358 citations

Engineering, Materials Engineering, Materials Science +17