Influence of Total Ionizing Dose on Sub-100 nm Gate-All-Around MOSFETs

Abstract

The influence of the total ionizing dose (TID) on sub-100 nm gate-all-around (GAA) MOSFETs is investigated through experiments and numerical simulations. Particularly, the TID effect is explored for various gate lengths and radiation doses. The radiation-induced charges and traps under the gate spacer result in changes of the device characteristics and is a dominant factor to cause the device degradation. This phenomenon is experimentally examined by the junction modification of GAA MOSFETs and supported by three-dimensional numerical simulations.