F. Faccio

Radiation-induced edge effects in deep submicron CMOS transistors

F. Faccio, G. Cervelli · IEEE Transactions on Nuclear Science · 2005 · 406 citations · Full text

Device Modeling, Isolation Test Structures, Electrical Engineering +11

Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects

G. Anelli, M. Campbell, M. Delmastro et al. · IEEE Transactions on Nuclear Science · 1999 · 369 citations · Full text

Electrical Engineering, Physical Design (Electronics), Engineering +15

Radiation-Induced Short Channel (RISCE) and Narrow Channel (RINCE) Effects in 65 and 130 nm MOSFETs

F. Faccio, Stefano Michelis, D. Cornale et al. · IEEE Transactions on Nuclear Science · 2015 · 199 citations

Semiconductor Technology, Electrical Engineering, Nm Mosfets +15

Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip

W. Snoeys, F. Faccio, Michael J. Burns et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2000 · 168 citations · Full text

Radiation Tolerance, Electrical Engineering, Engineering +11

Computational method to estimate Single Event Upset rates in an accelerator environment

M. Huhtinen, F. Faccio · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2000 · 129 citations

Collider Physic, Engineering, Particle Physics +8