Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing

Measurements of alloy composition and strain in thin Ge<i>x</i>Si1−<i>x</i> layers

J. C. Tsang, P. M. Mooney, F. H. Dacol et al. · Journal of Applied Physics · 1994 · 427 citations

Natural Sciences, Materials Science, Physics +15

Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon

Jan Linnros, R. G. Elliman, W. L. Brown · Journal of materials research/Pratt's guide to venture capital sources · 1988 · 149 citations

Natural Sciences, Materials Engineering, Materials Science +14

Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire

Jan Linnros, B. G. Svensson, G. Holmén · Physical review. B, Condensed matter · 1984 · 144 citations

Engineering, Materials Engineering, Materials Science +17

Deposition and Properties of Low‐Pressure Chemical‐Vapor Deposited Polycrystalline Silicon‐Germanium Films

Tsu‐Jae King, Krishna C. Saraswat · Journal of The Electrochemical Society · 1994 · 94 citations

Engineering, Materials Engineering, Materials Science +17

Raman spectroscopy study of amorphous SiGe films deposited by low pressure chemical vapor deposition and polycrystalline SiGe films obtained by solid-phase crystallization

J. Olivares, Á. Rodríguez, J. Sangrador et al. · Thin Solid Films · 2000 · 72 citations

Natural Sciences, Materials Engineering, Materials Science +17