Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma

High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Farid Khan, I. Adesida · Applied Physics Letters · 1999 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +15

Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries

J. J. Wang, E. S. Lambers, S. J. Pearton et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 64 citations

Natural Sciences, Materials Engineering, Materials Science +14

High rate etching of 4H–SiC using a SF6/O2 helicon plasma

Pascal Chabert, N. Proust, J. Perrin et al. · Applied Physics Letters · 2000 · 60 citations

Engineering, Materials Engineering, Materials Science +15

Etching of SiC Using Inductively Coupled Plasma

Li‐Hui Cao, Binghui Li, Jian Hui Zhao · Journal of The Electrochemical Society · 1998 · 50 citations

Engineering, Materials Engineering, Materials Science +10

Profile and Morphology Control during Etching of SiC Using Electron Cyclotron Resonant Plasmas

J. R. Flemish, Kelvin Y. Xie · Journal of The Electrochemical Society · 1996 · 38 citations

Engineering, Materials Engineering, Materials Science +13