J. L. Lee

A study on the reactive ion etching of SiC single crystals using inductively coupled plasma of SF6-based gas mixtures

Sungju Ahn, S.Y. Han, J. L. Lee et al. · Metals and Materials International · 2004 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +13

Origin of clear ferromagnetism for p-type GaN implanted with Fe+ (5 and 10at.%)

Yoon Shon, Sejoon Lee, H. C. Jeon et al. · Applied Physics Letters · 2006 · 19 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

High power 0.25 µm gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz

Doo‐Hyeb Youn, J.‐H. Lee, V. Kumar et al. · Electronics Letters · 2003 · 16 citations

Engineering, Electrical Engineering, Materials Science +17

Reactive ion etching of SiC using C2F6/O2 inductively coupled plasma

Shinhye Kong, Hyung-Kyu Choi, B.-T. Lee et al. · Journal of Electronic Materials · 2002 · 15 citations

Natural Sciences, Materials Engineering, Materials Science +10