Jian Hui Zhao - Concepedia

Author

Jian Hui Zhao

Rutgers, The State University of New Jersey

Also Known As

J Zhao, J.H. Zhao, Jian H Zhao, Jian H. Zhao, Jian Hui Zhao, Jian Zhao, Marie‐Therese Schaeffer, Xiao, Liang, Zhao, Zhao, Jian

177

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Rutgers, The State University of New Jersey Rutgers Sexual and Reproductive Health and Rights United Silicon Carbide (United States)Goddard Space Flight Center Center for Physical Sciences and Technology

About

Jian Hui Zhao is an author at Rutgers, The State University of New Jersey specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	36	957
2	Electrical Engineering	18	34	905
3	Applied Physics	17	28	807
4	Natural Sciences	4	4	81
5	Marine Engineering	1	1	14

Jian Hui Zhao

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Monte Carlo study of electron transport in SiC R. Mickevičius, Jian Hui Zhao Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	1998	102
Nonlocal effects in thin 4H-SiC UV avalanche photodiodes Beng Koon Ng, J.P.R. David, R.C. Tozer, IEEE Transactions on Electron Devices	2003	69
SILICON CARBIDE SCHOTTKY BARRIER DIODE Jian Hui Zhao, Kuang Sheng, Ramon Lebron-Velilla International Journal of High Speed Electronics and Systems Semiconductor TechnologyElectrical EngineeringEngineeringHigh Voltage EngineeringApplied Physics	2005	54
Etching of SiC Using Inductively Coupled Plasma Li‐Hui Cao, Binghui Li, Jian Hui Zhao Journal of The Electrochemical Society Materials EngineeringMaterials ScienceElectrical EngineeringIcp PowerEngineering	1998	50
1.88-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 1650-V Normally on 4H-SiC TI-VJFET Yuzhu Li, P. Alexandrov, Jian Hui Zhao IEEE Transactions on Electron Devices EngineeringMeasurementPower ElectronicsSemiconductor DeviceSemiconductors	2008	48
Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors Jianhui Zhang, Xueqing Li, P. Alexandrov, IEEE Transactions on Electron Devices Semiconductor Technology4H-sic Bjt WaferElectrical EngineeringSemiconductor DeviceEngineering	2008	48
Highly sensitive visible-blind extreme ultraviolet Ni/4H-SiC Schottky photodiodes with large detection area Jun Hu, Xiaobin Xin, Jian Hui Zhao, Optics Letters PhotonicsElectrical EngineeringPhotoluminescenceEngineeringLarge Detection Area	2006	44
Theoretical and Experimental Study of 4H-SiC Junction Edge Termination Xueqing Li, K. Tone, Li Hui Cao, Materials science forum Electrical EngineeringEngineeringPower DeviceApplied PhysicsPower Semiconductor Device	2000	41
Assessment of osteoinduction using a porous hydroxyapatite coating prepared by micro-arc oxidation on a new titanium alloy Wensen Jing, Minghua Zhang, Lei Jin, International Journal of Surgery	2015	39
Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo technique V. Gruz̆inskis, P. Shiktorov, E. Starikov, Semiconductor Science and Technology EngineeringGan TedsPower ElectronicsElectromagnetic CompatibilityRf Semiconductor	2001	38

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