Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

29.5%-efficient GaInP/GaAs tandem solar cells

K. A. Bertness, Sarah Kurtz, Daniel J. Friedman et al. · Applied Physics Letters · 1994 · 314 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Over 30% efficient InGaP/GaAs tandem solar cells

Tatsuya Takamoto, Eiji Ikeda, Hiroshi Kurita et al. · Applied Physics Letters · 1997 · 296 citations

Engineering, Electrical Engineering, Materials Science +17

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Engineering, Materials Engineering, Materials Science +14

Abrupt <i>p</i>-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxy

Naoki Kobayashi, Toshiki Makimōto, Yoshiji Horíkoshi · Applied Physics Letters · 1987 · 162 citations

Engineering, Electrical Engineering, Materials Science +17

Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy

Makoto Konagai, Takumi Yamada, Takeshi Akatsuka et al. · Journal of Crystal Growth · 1989 · 156 citations

Engineering, Materials Engineering, Materials Science +14