High quality 4H-SiC epitaxial layers grown by chemical vapor deposition

Abstract

High quality, homoepitaxial layers of 4H-SiC have been grown by chemical vapor deposition in a hot-wall reactor. The residual doping concentration obtained by capacitance versus voltage measurements was as low as 2×1014 cm−3. The high quality is confirmed by photoluminescence measurements performed at low temperatures (1.8–4.2 K) showing strong free exciton related luminescence and by the fact that optically detected cyclotron resonance signals could be observed (at 6 K), as a result of the highest mobility reported in SiC.