Concepedia

Hf1−xSixO2 deposition by metal organic chemical vapor deposition using the Hf(NEt2)4/SiH(NEt2)3/O2 gas system

Yoshio Ohshita, Atsushi Ogura, Masato Ishikawa, Asako Hoshino, Shigeki Hiiro, Toshie Suzuki, Hideaki Machida

Thin Solid Films · 2002 · 16 citations · 3 references

DOI

Concepts

References

3

Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing

Byoung Hun Lee, Laegu Kang, R. Nieh et al. · Applied Physics Letters · 2000 · 606 citations

, , +17

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

G. D. Wilk, Robert M. Wallace · Applied Physics Letters · 1999 · 504 citations

, , +17

HfO2 growth by low-pressure chemical vapor deposition using the Hf(N(C2H5)2)4/O2 gas system

Yoshio Ohshita, Atsushi Ogura, Asako Hoshino et al. · Journal of Crystal Growth · 2001 · 58 citations

, , +8