Growth of non-polar (112¯0)GaN on a patterned (110)Si substrate by selective MOVPE

Structural characterization of nonpolar (1120) <i>a</i>-plane GaN thin films grown on (1102) <i>r</i>-plane sapphire

Michael D. Craven, Sung‐Hwan Lim, Feng Wu et al. · Applied Physics Letters · 2002 · 487 citations

Natural Sciences, Materials Engineering, Materials Science +17

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 414 citations

Engineering, Electrical Engineering, Materials Engineering +14

Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates

Mitsuru Funato, Masaya Ueda, Yoichi Kawakami et al. · Japanese Journal of Applied Physics · 2006 · 390 citations

Engineering, Electrical Engineering, Materials Science +17

Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

B. A. Haskell, Troy J. Baker, Melvin McLaurin et al. · Applied Physics Letters · 2005 · 196 citations

Engineering, Materials Engineering, Materials Science +17

Defect reduction in (1120) <i>a</i>-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

B. A. Haskell, Feng Wu, Michael D. Craven et al. · Applied Physics Letters · 2003 · 175 citations

Natural Sciences, Materials Engineering, Materials Science +17