Toshiki Hikosaka

Growth and properties of semi-polar GaN on a patterned silicon substrate

Nobuhiko Sawaki, Toshiki Hikosaka, Norikatsu Koide et al. · Journal of Crystal Growth · 2009 · 75 citations

Engineering, Electrical Engineering, Materials Science +14

Growth of semi‐polar (11‐22)GaN on a (113)Si substrate by selective MOVPE

Tomoyuki Tanikawa, Toshiki Hikosaka, Yoshio Honda et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 68 citations

Engineering, Materials Engineering, Materials Science +15

Optical and electrical properties of (1-101)GaN grown on a 7° off-axis (001)Si substrate

Toshiki Hikosaka, Tetsuo Narita, Yoshio Honda et al. · Applied Physics Letters · 2004 · 51 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Growth of non-polar (112¯0)GaN on a patterned (110)Si substrate by selective MOVPE

Tomoyuki Tanikawa, Daniel Rudolph, Toshiki Hikosaka et al. · Journal of Crystal Growth · 2008 · 42 citations

Engineering, Materials Engineering, Materials Science +14

Fabrication and properties of semi‐polar (1‐101) and (11‐22) InGaN/GaN light emitting diodes on patterned Si substrates

Toshiki Hikosaka, Tomoyuki Tanikawa, Yoshio Honda et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 32 citations

Engineering, Materials Engineering, Materials Science +15