SON (silicon on nothing)-a new device architecture for the ULSI era

Abstract

A novel device architecture called SON (silicon on nothing) is proposed, allowing extremely thin buried oxides and silicon films to be fabricated and thereby provide better resistance to short channel effects (SCE) and DIBL than any other device architecture. SON devices are shown to present excellent I/sub on//I/sub off/ trade-off, V/sub th/ roll-off suppression down to 15 nm channel length, and to be free from the shortcomings of conventional SOI, such as self-heating, high S/D series resistances, and expensive SOI substrates since SON devices are fabricated on bulk silicon.