Low dislocation density, high power InGaN laser diodes

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer

H. Teisseyre, P. Perlin, T. Suski et al. · Journal of Applied Physics · 1994 · 187 citations

Natural Sciences, Materials Engineering, Materials Science +17

Defect-selective etching of GaN in a modified molten bases system

G. Kamler, J.L. Weyher, I. Grzegory et al. · Journal of Crystal Growth · 2002 · 99 citations

Engineering, Materials Engineering, Materials Science +14

Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Tsvetanka Zheleva, Okhyun Nam, W. M. Ashmawi et al. · Journal of Crystal Growth · 2001 · 67 citations

Engineering, Materials Engineering, Materials Science +16

Higher efficiency InGaN laser diodes with an improved quantum well capping configuration

M. Hansen, Joachim Piprek, P. Morgan Pattison et al. · Applied Physics Letters · 2002 · 57 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Expanding Emission Wavelength on Nitride Light-Emitting Devices

Takashi Mukai, Shin‐ichi Nagahama, Tomoya Yanamoto et al. · physica status solidi (a) · 2002 · 20 citations

Engineering, Electrical Engineering, Materials Science +17