Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD

Abstract

Abstract BGaN epilayers were grown on GaN/sapphire templates in hydrogen atmosphere by metal organic chemical vapor deposition (MOCVD). The growth was attempted at different temperatures and flow rates of triethylboron, which was used as boron precursor. According to XRD measurements, up to 2.9% of boron was incorporated in 500 nm‐thick BGaN layers deposited at 870 °C. Comparison of XRD results with the red shift observed in the photoluminescence band with increasing boron content confirms an extremely large value of ∼10 eV for the bowing parameter in BGaN.