C. H. Wei

Gaseous etching of 6H–SiC at relatively low temperatures

Zihao Xie, C. H. Wei, L.Y Li et al. · Journal of Crystal Growth · 2000 · 45 citations

Engineering, Materials Engineering, Materials Science +16

MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates

C. H. Wei, Zheng Xie, L. Y. Li et al. · Journal of Electronic Materials · 2000 · 31 citations

Engineering, Materials Engineering, Materials Science +14

MOCVD growth of GaBN on 6H-SiC (0001) substrates

C. H. Wei, Zihao Xie, James H. Edgar et al. · Journal of Electronic Materials · 2000 · 29 citations

Engineering, Materials Engineering, Materials Science +12

Unstable composition region in the wurtzite B1−x−yGaxAlyN system

C. H. Wei, James H. Edgar · Journal of Crystal Growth · 2000 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +12

Hardness, elastic modulus and structure of indium nitride thin films on AlN-nucleated sapphire substrates

James H. Edgar, C. H. Wei, Douglas T. Smith et al. · Journal of Materials Science Materials in Electronics · 1997 · 16 citations

Natural Sciences, Materials Engineering, Materials Science +13