M. Shin

Determination of wurtzite GaN lattice polarity based on surface reconstruction

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Applied Physics Letters · 1998 · 305 citations

Materials Science, Materials Engineering, Polarity Assignment +15

GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

Arthur R. Smith, R. M. Feenstra, David W. Greve et al. · Surface Science · 1999 · 125 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +8

Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction

Arthur R. Smith, V. Ramachandran, R. M. Feenstra et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 121 citations · Full text

Materials Science, Semiconductors, Wide-bandgap Semiconductor +12

Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of Applied Physics · 1998 · 106 citations

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +15

On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy

A. Y. Polyakov, M. Shin, J. A. Freitas et al. · Journal of Applied Physics · 1996 · 94 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16