Determination of wurtzite GaN lattice polarity based on surface reconstruction

Arthur R. Smith, R. M. Feenstra, David W. Greve, +4

Applied Physics Letters

Materials ScienceMaterials EngineeringPolarity AssignmentWide-bandgap SemiconductorEngineering +13

GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations

Arthur R. Smith, R. M. Feenstra, David W. Greve, +4

Surface Science

Materials ScienceWide-bandgap SemiconductorEngineeringTunneling MicroscopyPhysics +6

Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction

Arthur R. Smith, V. Ramachandran, R. M. Feenstra, +5

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Materials ScienceSemiconductorsWide-bandgap SemiconductorEngineeringCrystalline Defects +10

Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, +3

Journal of Applied Physics

SemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyElectronic DevicesEngineering +13

On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy

A. Y. Polyakov, M. Shin, J. A. Freitas, +3

Journal of Applied Physics

Aluminium NitrideWide-bandgap SemiconductorEngineeringAl ContentDeep Centers +14

Properties of Si donors and persistent photoconductivity in AlGaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, +6

Solid-State Electronics

EngineeringSi DonorsApplied PhysicsAluminum Gallium NitrideCategoryiii-v Semiconductor +1

Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

Arthur R. Smith, V. Ramachandran, R. M. Feenstra, +7

MRS Internet Journal of Nitride Semiconductor Research

Evidence for localized Si-donor state and its metastable properties in AlGaN

C. Skierbiszewski, T. Suski, M. Leszczyński, +4

Applied Physics Letters

Materials ScienceSemiconductorsMetastable PropertiesSemiconductor TechnologyEngineering +13

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

A. Y. Polyakov, M. Shin, Marek Skowroński, +4

Journal of Electronic Materials

Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologySurface Science +5

Growth of AlBN solid solutions by organometallic vapor-phase epitaxy

A. Y. Polyakov, M. Shin, Weijin Qian, +3

Journal of Applied Physics

Materials ScienceMaterials EngineeringAluminium NitrideSolid PhaseHigher Boron Concentrations +12