J. A. Freitas - Concepedia

Author

J. A. Freitas

Also Known As

J. A. Freitas, J.A Freitas, J.A. Freitas, J.A. Freitas Jr., J.A. Freitas, Jr., J.A. Jr. Freitas, Janaina Alencar Freitas

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory Omega Optics (United States)

About

J. A. Freitas is an author at United States Naval Research Laboratory specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	14	1K
2	Applied Physics	13	14	1K
3	Natural Sciences	5	5	641
4	Electrical Engineering	5	5	242
5	Chemistry	3	3	554

J. A. Freitas

Publications

Citations

H-Index

Page 1

	Year	Citations
Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition E. R. Glaser, T. A. Kennedy, K. Doverspike, Physical review. B, Condensed matter Wide-bandgap SemiconductorOptical MaterialsEngineeringMagnetic ResonanceUndoped Gan Films	1995	327
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN Boris N. Feigelson, Travis J. Anderson, M. M. Abraham, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2011	133
Electron-spin-resonance studies of donors in wurtzite GaN W. E. Carlos, J. A. Freitas, M. Asif Khan, Physical review. B, Condensed matter Wide-bandgap SemiconductorEsr LinesEngineeringMagnetic ResonanceWurtzite Gan Films	1993	131
Donor-related recombination processes in hydride-vapor-phase epitaxial GaN J. A. Freitas, W. J. Moore, B. V. Shanabrook, Physical review. B, Condensed matter PhotoluminescenceEngineeringPhysicsDonor-related RecombinationNanoelectronics	2002	96
On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy A. Y. Polyakov, M. Shin, J. A. Freitas, Journal of Applied Physics Aluminium NitrideWide-bandgap SemiconductorEngineeringAl ContentDeep Centers	1996	94
Observation of optically detected magnetic resonance in GaN films E. R. Glaser, T. A. Kennedy, H. C. Crookham, Applied Physics Letters Wide-bandgap SemiconductorDeep StatePhotoluminescenceEngineeringPhysics	1993	46
Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy M. E. Zvanut, W. E. Carlos, J. A. Freitas, Applied Physics Letters Materials ScienceSpintronicsMineral PhysicDiamond-like CarbonEngineering	1994	41
Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers Kenneth Butcher, Afifuddin Afifuddin, Patrick P.–T. Chen, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringZno Buffer LayersEngineering	2002	30
Vertical breakdown of GaN on Si due to V-pits Sven Besendörfer, Alaleh Tajalli, Matteo Meneghini, Journal of Applied Physics Atomic Force MicroscopyWide-bandgap SemiconductorElectrical EngineeringEngineeringElectron Microscopy	2020	29
The nature of donor conduction in <i>n</i>-GaN M. Asif Khan, D. T. Olson, J. N. Kuznia, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringResidual DonorsEngineering	1993	25

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