J. A. Freitas

Optically detected magnetic resonance of GaN films grown by organometallic chemical-vapor deposition

E. R. Glaser, T. A. Kennedy, K. Doverspike et al. · Physical review. B, Condensed matter · 1995 · 327 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

Boris N. Feigelson, Travis J. Anderson, M. M. Abraham et al. · Journal of Crystal Growth · 2011 · 133 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +7

Electron-spin-resonance studies of donors in wurtzite GaN

W. E. Carlos, J. A. Freitas, M. Asif Khan et al. · Physical review. B, Condensed matter · 1993 · 131 citations

Wide-bandgap Semiconductor, Esr Lines, Engineering +16

Donor-related recombination processes in hydride-vapor-phase epitaxial GaN

J. A. Freitas, W. J. Moore, B. V. Shanabrook et al. · Physical review. B, Condensed matter · 2002 · 96 citations

Photoluminescence, Engineering, Physics +15

On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy

A. Y. Polyakov, M. Shin, J. A. Freitas et al. · Journal of Applied Physics · 1996 · 94 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16