Boris N. Feigelson - Concepedia

Author

Boris N. Feigelson

United States Naval Research Laboratory ORCID

Also Known As

B. Feigelson, B. N. Feigelson, B.N. Feigelson, Boris Feigelson, Boris N Feigelson, Boris N. Feigelson, Czyszanowski

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

United States Naval Research Laboratory National Academies of Sciences, Engineering, and Medicine University of Maryland, College Park American Society For Engineering Education George Mason University

About

Boris N. Feigelson is an author at United States Naval Research Laboratory specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	32	1.4K
2	Applied Physics	17	29	1.1K
3	Electrical Engineering	12	14	680
4	Chemistry	4	4	57
5	Chemical Engineering	3	3	57

Boris N. Feigelson

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
An extended hardness limit in bulk nanoceramics James A. Wollmershauser, Boris N. Feigelson, Edward P. Gorzkowski, Acta Materialia Materials ScienceEngineeringExtended Hardness LimitNanoscale ModelingSolid Mechanics	2014	184
Below the Hall–Petch Limit in Nanocrystalline Ceramics Heonjune Ryou, John W. Drazin, Kathryn J. Wahl, ACS Nano EngineeringSevere Plastic DeformationMechanical EngineeringCeramic PowdersGrain Size	2018	177
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Yuhao Zhang, Zhihong Liu, Marko J. Tadjer, IEEE Electron Device Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSemiconductor DeviceEngineering	2017	175
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN Boris N. Feigelson, Travis J. Anderson, M. M. Abraham, Journal of Crystal Growth Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	2011	133
Activation of Mg implanted in GaN by multicycle rapid thermal annealing Travis J. Anderson, Boris N. Feigelson, Francis J. Kub, Electronics Letters	2014	96
Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN Jordan D. Greenlee, Boris N. Feigelson, Travis J. Anderson, ECS Journal of Solid State Science and Technology Materials ScienceSmrta TechniqueElectrical EngineeringWide-bandgap SemiconductorImplanted Dopants	2015	61
Selective p-type Doping of GaN:Si by Mg Ion Implantation and Multicycle Rapid Thermal Annealing Marko J. Tadjer, Boris N. Feigelson, Jordan D. Greenlee, ECS Journal of Solid State Science and Technology Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2015	53
Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties Jordan D. Greenlee, Boris N. Feigelson, Travis J. Anderson, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorStructural PropertiesHigh Temperature MaterialsMg-implanted Gan	2014	48
Vertical GaN Junction Barrier Schottky Diodes Andrew D. Koehler, Travis J. Anderson, Marko J. Tadjer, ECS Journal of Solid State Science and Technology SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2016	45
Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, ECS Journal of Solid State Science and Technology Electroluminescence ImagingWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2016	43

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