Electronics Letters · 2014 · 97 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsEnergy MaterialsSemiconductor DevicesDevice ModelingIon ImplantationSemiconductor Device MaterialsThermal Properties Of SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium Nitride (Gan) MaterialsHigh-temperature Device OperationIon Implantation EffectsRapid Thermal AnnealingThermal Annealing
A long‐standing goal of GaN device research has been the development of a reliable, well‐controlled process for p‐GaN formation by ion implantation. Results to date have indicated an activation of 1% or less using high‐temperature rapid thermal annealing (RTA) techniques and coimplantation. Although Mg is a relatively deep acceptor, this is still much less than the theoretically achievable value (8.2% based on the 160 meV acceptor level). A multicycle RTA process is presented that is capable of achieving up to 8% activation of the Mg‐implanted GaN. This approaches the theoretical value, and represents a significant step in GaN device research.
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Fabrication and performance of GaN electronic devices
S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering R Reports · 2000 · 498 citations