Activation of Mg implanted in GaN by multicycle rapid thermal annealing

Abstract

A long‐standing goal of GaN device research has been the development of a reliable, well‐controlled process for p‐GaN formation by ion implantation. Results to date have indicated an activation of 1% or less using high‐temperature rapid thermal annealing (RTA) techniques and coimplantation. Although Mg is a relatively deep acceptor, this is still much less than the theoretically achievable value (8.2% based on the 160 meV acceptor level). A multicycle RTA process is presented that is capable of achieving up to 8% activation of the Mg‐implanted GaN. This approaches the theoretical value, and represents a significant step in GaN device research.