D. Dobrovolskas

Influence of quantum-confined Stark effect on optical properties within trench defects in InGaN quantum wells with different indium content

A. Vaitkevičius, J. Mickevičius, D. Dobrovolskas et al. · Journal of Applied Physics · 2014 · 32 citations

Wide-bandgap Semiconductor, Engineering, Trench Defects +20

Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

J. Mickevičius, D. Dobrovolskas, T. Steponavičius et al. · Applied Surface Science · 2017 · 29 citations

Materials Engineering, Materials Science, Epitaxial Growth +10

Optical and structural properties of BGaN layers grown on different substrates

A. Kadys, J. Mickevičius, T. Malinauskas et al. · Journal of Physics D Applied Physics · 2015 · 28 citations

Optical Materials, Engineering, Different Substrates +22

Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD

T. Malinauskas, A. Kadys, Sandra Stanionytė et al. · physica status solidi (b) · 2014 · 19 citations

Photoluminescence of Si nanocrystals under selective excitation

D. Dobrovolskas, J. Mickevičius, Gintautas Tamulaitis et al. · Journal of Physics and Chemistry of Solids · 2008 · 15 citations · Full text

Selective Excitation, Photoluminescence, Engineering +6