Concepedia

Growth of GaBN ternary solutions by organometallic vapor phase epitaxy

A. Y. Polyakov, M. Shin, Marek Skowroński, David W. Greve, R. G. Wilson, A. V. Govorkov, Ryan M. Desrosiers

Journal of Electronic Materials · 1997 · 39 citations · 13 references

Concepts

Natural SciencesMaterials EngineeringMaterials ScienceInorganic ChemistryMaterials ChemistrySolid-state ChemistryChemical Vapor DepositionCrystal EngineeringCrystal GrowthEpitaxial GrowthNucleationPerovskite MaterialsEpitaxial Growth KineticsMetalorganic Vapor Phase EpitaxyTernary CompoundsVapor GrowthVapor-liquid-solid Growth

References

13

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

Secondary Ion Mass Spectrometry

Analytica Chimica Acta · 1993 · 1.1K citations

Natural Sciences, Chemistry, Materials Science +16

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

Shiro Sakai, Yoshihiro Ueta, Yoji Terauchi Yoji Terauchi · Japanese Journal of Applied Physics · 1993 · 358 citations

Natural Sciences, Materials Science, Physics +17

Properties group III nitrides

M. Henini · III-Vs Review · 1995 · 254 citations

Natural Sciences, Chemistry, Materials Science +9