SAE technical papers on CD-ROM/SAE technical paper series · 2011 · 16 citations · 4 references
EngineeringEnergy EfficiencyHybrid Electric VehiclePower Electronic SystemsPower ElectronicsHt-2000 SeriesAdvanced Packaging (Semiconductors)High Voltage EngineeringElectronic PackagingMilitary SystemsPower Electronic DevicesElectrical EngineeringBias Temperature InstabilityPower Semiconductor DeviceComputer EngineeringHybrid VehicleHeat TransferExtreme Environment ElectronicsSic MosfetsAdvanced PackagingThermal EngineeringPower DeviceHigh TemperatureCarbide
<title>ABSTRACT</title> <p>In this paper, the authors present a line of newly developed high performance SiC power modules, HT-2000, for military systems and applications. The HT-2000 series of modules are rated to 1200V, are operational to greater than 100A, can perform at temperatures in excess of 250 °C, and can be constructed with SiC MOSFETs, JFETs, or BJTs. The newly developed module implements a novel ultra-low parasitic packaging approach that enables high switching frequencies in excess of 100 kHz, and weighs in at just over 100 grams (offering &gt;4× mass reduction in comparison with industry standard power brick packaging technology). The paper discusses testing results of these modules in actual system applications, including: (a) complete static characterization vs. temperature, and (b) switching performance.</p>
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An overview of Cree silicon carbide power devices
Jim Richmond, Sei‐Hyung Ryu, Mrinal K. Das et al. · 2005 · 58 citations