Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · 2010 · 12 citations · 3 references
EngineeringElectrical EngineeringMaterials SciencePower ElectronicsSemiconductor DevicesThermal AnalysisGate Drive CircuitsIntegrated Circuit DesignSemiconductor Device MaterialsThermal DesignThermal ManagementWide-bandgap Semiconductor DevicesGate Driver DesignHigh-temperature ElectronicsIntegrated Power ModulesSilicon CarbideSilicon Carbide (Sic) MaterialsSilicon Carbide Gate DriversSilicon Carbide Power DevicesSilicon Carbide Power Electronics
Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.
3
Silicon carbide for power devices
John W. Palmour, Ranbir Singh, R Glass et al. · 2002 · 71 citations
A Fully Integrated 300°C, 4 kW, 3-Phase, SiC Motor Drive Module
Jared Hornberger, Edgar Cilio, Brice McPherson et al. · 2007 · 34 citations
Engineering, Electrical Engineering, Mechanical Engineering +16