The Ohmic Conduction Mechanism in High-Dielectric-Constant ZrO[sub 2] Thin Films

Abstract

metal-insulator-semiconductor capacitors were fabricated. The films were deposited by radio frequency magnetron sputtering. The X-ray photoelectron spectroscopy analysis shows the silicate interfacial layer formed between and Si. The hysteresis and the density of positive oxide trapped charges of the capacitors from capacitance-voltage measurement were 230 mV and , respectively. The equivalent oxide thickness of was estimated to be 5.6 nm. The typical dielectric constant of 11.1 was calculated. With the A1 electrode biased negative, the conduction mechanism in the electrical field below and in the temperature range was found to be ohmic emission. A model of thermally excited and hopping electrons was proposed to explain the mechanism of ohmic conduction current.