Static Random Access Memory Modeling

Static Random Access Memory Modeling is a computational framework that formally characterizes the structure, behavior, and performance of static random access memory systems through deterministic state transitions and bistable feedback mechanisms inherent to semiconductor latch-based storage elements.

64

Publications

3K

Citations

308

Authors

110

Institutions

Publications per year

2017–2026

16

Authors

308

  1. LW
    L. W. Massengill

    Vanderbilt University, United States

    5 publications · 294 citations

    5

    h-index

  2. RD
    Ronald D. Schrimpf

    Vanderbilt University, United States

    5 publications · 271 citations

    5

    h-index

  3. RA
    Robert A. Reed

    Vanderbilt University, United States

    4 publications · 196 citations

    4

    h-index

  4. BD
    Brian D. Sierawski

    Vanderbilt University, United States

    4 publications · 188 citations

    4

    h-index

  5. GH
    G. Hubert

    Office National d'Études et de Recherches Aérospatiales, France

    4 publications · 175 citations

    4

    h-index

1–5 of 308

Venues

  1. IEEE Transactions on Nuclear Science

    19 publications · 827 citations

    16

    h-index

  2. 4

    h-index

  3. IEEE Transactions on Electron Devices

    4 publications · 110 citations

    4

    h-index

  4. Solid-State Electronics

    3 publications · 57 citations

    3

    h-index

  5. 2

    h-index

1–5