Concepedia

Punch-through

Punch-Through is a short-channel effect in metal-oxide-semiconductor field-effect transistors wherein the depletion regions of the source and drain extend toward each other and merge, leading to a loss of gate control over the channel and uncontrolled conduction between the source and drain.

207

Publications

7.1K

Citations

726

Authors

239

Institutions

Publications per year

2017–2026

38

Variants

Punchthrough

Parents

Publications

207

A Quantitative Analysis of the Voltage-Current Relationships of Fixed Charge Membranes and the Associated Property of “Punch-Through”

H.G.L. Coster · Biophysical Journal · 1965 · 295 citations

, , +17

Nanoscale FinFETs with gate-source/drain underlap

Vishal Trivedi, J.G. Fossum, M.M. Chowdhury · IEEE Transactions on Electron Devices · 2004 · 272 citations

, , +16

Punch-through in short-channel AlGaN/GaN HFETs

Michael J. Uren, K. J. Nash, R.S. Balmer et al. · IEEE Transactions on Electron Devices · 2006 · 220 citations

, , +15

Scaling and Universality in Rock Fracture

Jörn Davidsen, Sergei Stanchits, Georg Dresen · Physical Review Letters · 2007 · 168 citations · Full text

, , +15

Breakdown mechanisms in AlGaN/GaN HEMTs: An overview

Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni · Japanese Journal of Applied Physics · 2014 · 158 citations · Full text

, , +17

1–5 of 207

Authors

726

  1. MC
    Mark Cassidy

    The University of Western Australia, Australia

    9 publications · 440 citations

    9

    h-index

  2. PH
    Pan Hu

    Guizhou University, China

    7 publications · 383 citations

    7

    h-index

  3. SS
    Sam Stanier

    The University of Western Australia, Australia

    7 publications · 372 citations

    7

    h-index

  4. RH
    Ryoichi Hanaoka

    Kanazawa Institute of Technology, Japan

    5 publications · 79 citations

    5

    h-index

  5. DW
    Dong Wang

    Ocean University of China, China

    5 publications · 313 citations

    5

    h-index

1–5 of 726

Institutions

239

  1. The University of Western Australia

    Perth, Australia

    12 h-index

    40 publications

    1.8K citations

  2. Mitsubishi Electric (Japan)

    Tokyo, Japan

    9 h-index

    40 publications

    884 citations

  3. ABB (Switzerland)

    Zurich, Switzerland

    6 h-index

    24 publications

    1.2K citations

  4. Hitachi (Japan)

    Tokyo, Japan

    5 h-index

    25 publications

    590 citations

  5. Kanazawa Institute of Technology

    Nonoichi, Japan

    5 h-index

    12 publications

    189 citations

  6. National Institute of Technology, Toyama College

    Toyama, Japan

    5 h-index

    5 publications

    79 citations

  7. University of Cambridge

    Cambridge, United Kingdom

    5 h-index

    12 publications

    447 citations

  8. Seoul National University

    Seoul, South Korea

    4 h-index

    13 publications

    254 citations

1–8 of 239

Venues

  1. IEEE Transactions on Electron Devices

    22 publications · 1.3K citations

    18

    h-index

  2. IEEE Electron Device Letters

    9 publications · 283 citations

    9

    h-index

  3. Japanese Journal of Applied Physics

    JJAP · 8 publications · 304 citations

    8

    h-index

  4. Géotechnique

    7 publications · 296 citations

    7

    h-index

  5. Applied Physics Letters

    7 publications · 193 citations

    7

    h-index

1–5