Interface Trapping Noise
Interface Trapping Noise is a type of low-frequency noise in semiconductor devices arising from the random capture and emission of charge carriers by interface states at the semiconductor-dielectric interface, distinguished from other noise mechanisms by its origin in temporal fluctuations of carrier occupation at localized trap sites near the interface.
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Interface Trap Noise
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Individual defects at the Si:SiO<sub>2</sub>interface
M. J. Kirton, Michael J. Uren, S. Collins et al. · Semiconductor Science and Technology · 1989 · 117 citations
Trap healing and ultralow-noise Hall effect at the surface of organic semiconductors
B. Lee, Y. Chen, Danni Fu et al. · Nature Materials · 2013 · 74 citations
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National Institute Of Technology Silchar
Silchar, India
4 h-index
11 publications
471 citations
IMEC
Leuven, Belgium
3 h-index
8 publications
181 citations
Wolfspeed, Inc. (United States)
Durham, United States
3 h-index
7 publications
187 citations

Centre National de la Recherche Scientifique
Paris, France
3 h-index
7 publications
210 citations

Centro Universitário FEI
São Bernardo do Campo, Brazil
2 h-index
7 publications
85 citations
Commissariat à l'Énergie Atomique et aux Énergies Alternatives
Paris, France
2 h-index
4 publications
69 citations
Yale University
New Haven, United States
2 h-index
4 publications
144 citations
Korea University
Seoul, South Korea
2 h-index
10 publications
1.6K citations
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7 publications · 505 citations
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