Interface Trapping Noise

Interface Trapping Noise is a type of low-frequency noise in semiconductor devices arising from the random capture and emission of charge carriers by interface states at the semiconductor-dielectric interface, distinguished from other noise mechanisms by its origin in temporal fluctuations of carrier occupation at localized trap sites near the interface.

45

Publications

1.8K

Citations

191

Authors

76

Institutions

Publications per year

2017–2026

3

Variants

Interface Trap Noise

Authors

191

  1. SD
    Sarit Dhar

    Auburn University, United States

    3 publications · 87 citations

    3

    h-index

  2. BB
    Brinda Bhowmick

    National Institute Of Technology Silchar, India

    3 publications · 149 citations

    3

    h-index

  3. DM
    Daniel M. Fleetwood

    Vanderbilt University, United States

    3 publications · 93 citations

    3

    h-index

  4. RT
    Renan Trevisoli

    Centro Universitário FEI, Brazil

    2 publications · 24 citations

    2

    h-index

  5. AJ
    A. Jeleński

    University of Massachusetts Amherst, United States

    2 publications · 44 citations

    2

    h-index

1–5 of 191

Venues

  1. IEEE Transactions on Electron Devices

    7 publications · 505 citations

    7

    h-index

  2. Applied Physics Letters

    4 publications · 89 citations

    4

    h-index

  3. IEEE Electron Device Letters

    4 publications · 125 citations

    4

    h-index

  4. Journal of Applied Physics

    3 publications · 140 citations

    3

    h-index

  5. Semiconductor Science and Technology

    2 publications · 130 citations

    2

    h-index

1–5