Renan Trevisoli

Junctionless Multiple-Gate Transistors for Analog Applications

Rodrigo T. Doria, Marcelo Antonio Pavanello, Renan Trevisoli et al. · IEEE Transactions on Electron Devices · 2011 · 268 citations

Device Modeling, Analog Properties, Electrical Engineering +11

Threshold voltage in junctionless nanowire transistors

Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza et al. · Semiconductor Science and Technology · 2011 · 122 citations

Device Modeling, Electrical Engineering, Semiconductor Device +11

Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza et al. · IEEE Transactions on Electron Devices · 2012 · 117 citations · Full text

Device Modeling, Effective Surface Potential, Electrical Engineering +10

Cryogenic Operation of Junctionless Nanowire Transistors

Michelly de Souza, Marcelo Antonio Pavanello, Renan Trevisoli et al. · IEEE Electron Device Letters · 2011 · 56 citations

Experimental Results, Electrical Engineering, Semiconductor Device +10

Impact of the Series Resistance in the I-V Characteristics of Junctionless Nanowire Transistors and its dependence on the Temperature

Rodrigo T. Doria, Renan Trevisoli, Michelly de Souza et al. · Journal of Integrated Circuits and Systems · 2020 · 55 citations · Full text

Device Modeling, Electrical Engineering, Im Triple Transistors +13