Rodrigo T. Doria - Concepedia

Author

Rodrigo T. Doria

Also Known As

R Doria, R. T. Doria, R.T. Doria, Renan T. Doria, Renan Trevisoli Doria, Rodrigo Doria, Rodrigo T Doria, Rodrigo T. Doria, Rodrigo Trevisoli Doria, Rodrigo Trevisoli Dória

181

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Centro Universitário FEI Universidade de São Paulo Commissariat à l'Énergie Atomique et aux Énergies Alternatives University College Cork UCLouvain

About

Rodrigo T. Doria is an author at Centro Universitário FEI specializing in electrical engineering, engineering, and nanoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	31	1.7K
2	Electrical Engineering	18	31	1.7K
3	Applied Physics	17	25	1.6K
4	Physics	7	7	543
5	Computer Engineering	4	4	56

Rodrigo T. Doria

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Reduced electric field in junctionless transistors Jean-Pierre Colinge, Chi‐Woo Lee, Isabelle Ferain, Applied Physics Letters Device ModelingElectrical EngineeringReduced Electric FieldEngineeringPhysics	2010	316
Junctionless Multiple-Gate Transistors for Analog Applications Rodrigo T. Doria, Marcelo Antonio Pavanello, Renan Trevisoli, IEEE Transactions on Electron Devices Device ModelingAnalog PropertiesElectrical EngineeringJl TransistorsEngineering	2011	268
Low subthreshold slope in junctionless multigate transistors Chi‐Woo Lee, A. N. Nazarov, Isabelle Ferain, Applied Physics Letters Device ModelingJunctionless Multigate TransistorsElectrical EngineeringEngineeringNanoelectronics	2010	230
Threshold voltage in junctionless nanowire transistors Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza, Semiconductor Science and Technology Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPhysics	2011	122
Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza, IEEE Transactions on Electron Devices Device ModelingEffective Surface PotentialElectrical EngineeringSemiconductor DeviceEngineering	2012	117
Cryogenic Operation of Junctionless Nanowire Transistors Michelly de Souza, Marcelo Antonio Pavanello, Renan Trevisoli, IEEE Electron Device Letters Experimental ResultsElectrical EngineeringSemiconductor DeviceCryogenic OperationEngineering	2011	56
Impact of the Series Resistance in the I-V Characteristics of Junctionless Nanowire Transistors and its dependence on the Temperature Rodrigo T. Doria, Renan Trevisoli, Michelly de Souza, Journal of Integrated Circuits and Systems Device ModelingElectrical EngineeringIm Triple TransistorsEngineeringSpecific Resistance	2020	55
A physically-based threshold voltage definition, extraction and analytical model for junctionless nanowire transistors Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza, Solid-State Electronics Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringNanotechnology	2013	49
Substrate Bias Influence on the Operation of Junctionless Nanowire Transistors Renan Trevisoli, Rodrigo T. Doria, Michelly de Souza, IEEE Transactions on Electron Devices Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringNanotechnology	2014	43
Charge-based continuous model for long-channel Symmetric Double-Gate Junctionless Transistors A. Cerdeira, M. Estrada, Renan Trevisoli, Solid-State Electronics Device ModelingElectrical EngineeringEngineeringNanoelectronicsCharge-based Continuous Model	2013	38

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