Concepedia

Hydrogen Silsesquioxane Processing

Hydrogen Silsesquioxane Processing is a microfabrication technique in MEMS manufacturing that utilizes a spin-coatable, organosilicon-based precursor material to form siloxane-based dielectric or structural layers through controlled curing, distinguishing it from conventional silicon dioxide deposition methods by enabling low-temperature, high-aspect-ratio patterning with sublithographic resolution.

120

Publications

5.4K

Citations

496

Authors

138

Institutions

Publications per year

2017–2026

11

Parents

Publications

120

Hydrogen Silsesquioxane:  A Molecular Precursor for Nanocrystalline Si−SiO<sub>2</sub> Composites and Freestanding Hydride-Surface-Terminated Silicon Nanoparticles

Colin M. Hessel, Eric J. Henderson, Jonathan G. C. Veinot · Chemistry of Materials · 2006 · 393 citations

, , +16

Understanding of hydrogen silsesquioxane electron resist for sub-5-nm-half-pitch lithography

Joel K. W. Yang, B. Cord, Huigao Duan et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 181 citations · Full text

, , +13

Properties of a ‐ SiO x  :  H  Thin Films Deposited from Hydrogen Silsesquioxane Resins

Mark J. Loboda, Christopher Grove, R. F. Schneider · Journal of The Electrochemical Society · 1998 · 175 citations

, , +17

The structures and properties of hydrogen silsesquioxane (HSQ) films produced by thermal curing

Chang‐Chung Yang, Wen‐Chang Chen · Journal of Materials Chemistry · 2002 · 164 citations

, , +17

Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist

W. Henschel, Yordan M. Georgiev, H. Kurz · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2003 · 151 citations

, , +13

1–5 of 120

Authors

496

  1. KK
    Karl K. Berggren

    Massachusetts Institute of Technology, United States

    7 publications · 443 citations

    7

    h-index

  2. JG
    Jonathan G. C. Veinot

    University of Alberta, Canada

    6 publications · 684 citations

    6

    h-index

  3. JK
    Joel K. W. Yang

    Singapore University of Technology and Design, Singapore

    6 publications · 419 citations

    6

    h-index

  4. SM
    Shinji Matsui

    University of Hyogo, Japan

    5 publications · 148 citations

    5

    h-index

  5. BC
    B. Cord

    Massachusetts Institute of Technology, United States

    4 publications · 395 citations

    4

    h-index

1–5 of 496

Institutions

138

  1. Massachusetts Institute of Technology

    Cambridge, United States

    10 h-index

    49 publications

    2.5K citations

  2. Corning (United States)

    Corning, United States

    8 h-index

    23 publications

    1.2K citations

  3. University of Alberta

    Edmonton, Canada

    7 h-index

    33 publications

    3K citations

  4. Lawrence Berkeley National Laboratory

    Berkeley, United States

    7 h-index

    30 publications

    946 citations

  5. Delft University of Technology

    Delft, The Netherlands

    6 h-index

    15 publications

    941 citations

  6. Dow Chemical (Japan)

    Tokyo, Japan

    5 h-index

    16 publications

    369 citations

  7. NTT Basic Research Laboratories

    Atsugi, Japan

    5 h-index

    10 publications

    680 citations

  8. Chinese Academy of Sciences

    Beijing, China

    4 h-index

    16 publications

    517 citations

1–8 of 138

Venues

  1. 23

    h-index

  2. 11

    h-index

  3. Chemistry of Materials

    7 publications · 723 citations

    7

    h-index

  4. Microelectronic Engineering

    6 publications · 159 citations

    6

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 6 publications · 168 citations

    6

    h-index

1–5