Defect Metrology

Defect Metrology is a systematic analytical framework within semiconductor science that quantifies and characterizes structural imperfections in crystalline materials through precise measurement techniques, distinguishing itself by enabling the correlation of defect density, type, and distribution with device performance and yield.

187

Publications

5.8K

Citations

757

Authors

249

Institutions

Publications per year

2017–2026

34

Authors

757

  1. BB
    Benjamin Bunday

    National Institute of Standards and Technology, United States

    7 publications · 205 citations

    7

    h-index

  2. AA
    Abraham Arceo

    IBM (United States), United States

    4 publications · 100 citations

    4

    h-index

  3. ES
    Eric Solecky

    GlobalFoundries (United States), United States

    4 publications · 128 citations

    4

    h-index

  4. AV
    Alok Vaid

    GlobalFoundries (United States), United States

    4 publications · 120 citations

    4

    h-index

  5. LA
    L. A. Bursill

    The University of Melbourne, Australia

    3 publications · 75 citations

    3

    h-index

1–5 of 757

Venues

  1. 13

    h-index

  2. Journal of Crystal Growth

    10 publications · 176 citations

    10

    h-index

  3. physica status solidi (a)

    8 publications · 176 citations

    8

    h-index

  4. 5

    h-index

  5. Journal of Applied Physics

    4 publications · 134 citations

    4

    h-index

1–5