Contact Scaling

Contact Scaling is a theoretical framework in semiconductor device physics that characterizes the reduction in metal-semiconductor contact dimensions and its impact on electrical performance, reliability, and interface properties as device feature sizes scale down in integrated circuits.

102

Publications

5.2K

Citations

678

Authors

131

Institutions

Publications per year

2017–2026

Parents

Metal-semiconductor Contacts

Publications

102

Improved Contacts to MoS<sub>2</sub> Transistors by Ultra-High Vacuum Metal Deposition

Chris English, Gautam Shine, Vincent E. Dorgan et al. · Nano Letters · 2016 · 539 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Full copper wiring in a sub-0.25 μm CMOS ULSI technology

D. Edelstein, J. Heidenreich, R. Goldblatt et al. · 2002 · 352 citations

Engineering, Computer Engineering, Electrical Engineering +17

Adjustable nanofabricated atomic size contacts

J. M. van Ruitenbeek, Analía Álvarez, I. Piñeyro et al. · Review of Scientific Instruments · 1996 · 309 citations · Full text

Natural Sciences, Materials Science, Physics +17

Challenges and Limitations of CMOS Scaling for FinFET and Beyond Architectures

Ali Razavieh, P. Zeitzoff, Edward J. Nowak · IEEE Transactions on Nanotechnology · 2019 · 280 citations

Engineering, Electrical Engineering, Microelectronics +16

End-bonded contacts for carbon nanotube transistors with low, size-independent resistance

Qing Cao, Shu‐Jen Han, J. Tersoff et al. · Science · 2015 · 218 citations

Engineering, Electrical Engineering, Materials Science +17

1–5 of 102

Authors

678

HP
H.‐S. Philip Wong
Stanford University, United States
5 publications · 182 citations
5
h-index
AD
Aaron D. Franklin
Duke University, United States
5 publications · 625 citations
5
h-index
SH
Shu‐Jen Han
IBM Research - Thomas J. Watson Research Center, United States
5 publications · 400 citations
5
h-index
WH
Wilfried Haensch
IBM Research - Thomas J. Watson Research Center, United States
5 publications · 505 citations
5
h-index
GS
George S. Tulevski
IBM Research - Thomas J. Watson Research Center, United States
4 publications · 367 citations
4
h-index

1–5 of 678

Institutions

131

1–8 of 131

Venues

IEEE Transactions on Electron Devices
10 publications · 265 citations
10
h-index
Applied Physics Letters
6 publications · 222 citations
6
h-index
Nano Letters
5 publications · 807 citations
5
h-index
IEEE Electron Device Letters
4 publications · 160 citations
4
h-index
ACS Nano
3 publications · 259 citations
3
h-index

1–5