G. Le Carval

Further Insights in TFET Operation

A. Villalon, G. Le Carval, Sébastien Martinie et al. · IEEE Transactions on Electron Devices · 2014 · 70 citations

Engineering, Electrical Engineering, Materials Science +13

Static and Dynamic TCAD Analysis of IMOS Performance: From the Single Device to the Circuit

F. Mayer, C. Le Royer, G. Le Carval et al. · IEEE Transactions on Electron Devices · 2006 · 53 citations

Engineering, Electrical Engineering, Electronic Materials +16

Investigation of Forming, SET, and Data Retention of Conductive-Bridge Random-Access Memory for Stack Optimization

Jérémy Guy, G. Molas, P. Blaise et al. · IEEE Transactions on Electron Devices · 2015 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +17

Experimental determination of the channel backscattering coefficient on 10–70nm-metal-gate Double-Gate transistors

V. Barral, T. Poiroux, M. Vinet et al. · Solid-State Electronics · 2007 · 35 citations

Engineering, Electrical Engineering, Materials Science +14

105nm Gate length pMOSFETs with high-K and metal gate fabricated in a Si process line on 200mm GeOI wafers

C. Le Royer, L. Clavelier, C. Tabone et al. · Solid-State Electronics · 2008 · 30 citations

Engineering, Electrical Engineering, Electronic Materials +16