Katsuya Okumura

10–15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing

Takayuki Ito, Toshihiko Iinuma, Atsushi Murakoshi et al. · Japanese Journal of Applied Physics · 2002 · 82 citations

Materials Science, Semiconductor Technology, Electrical Engineering +11

Silicon interposer technology for high-density package

M. Matsuo, N. Hayasaka, Katsuya Okumura et al. · 2002 · 41 citations

Bump Pitch, Electrical Engineering, Chip-scale Package +13

High performance damascene metal gate MOSFETs for 0.1 μm regime

A. Yagishita, Tomohiro Saito, K. Nakajima et al. · IEEE Transactions on Electron Devices · 2000 · 37 citations

Engineering, μM Regime, Damascene Gate Process +16

High performance metal gate MOSFETs fabricated by CMP for 0.1 μm regime

A. Yagishita, Tomohiro Saito, K. Nakajima et al. · 2002 · 34 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13

Novel Pb(Ti, Zr)O₃(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices

K. Yamakawa, Keitaro Imai, O. Arisumi et al. · Japanese Journal of Applied Physics · 2002 · 31 citations

Engineering, Crystal Growth Technology, Ferroelectric Random-access Memory +18