M. Lorenzini

Analytical Percolation Model for Predicting Anomalous Charge Loss in Flash Memories

R. Degraeve, F. Schuler, B. Kaczer et al. · IEEE Transactions on Electron Devices · 2004 · 88 citations

Non-volatile Memory, Electrical Engineering, Engineering +14

Analytical model for failure rate prediction due to anomalous charge loss of flash memories

R. Degraeve, F. Schuler, M. Lorenzini et al. · 2002 · 38 citations

Engineering, Flash Memories, Reliability Engineering +18

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

L. Breuil, L. Haspeslagh, Pieter Blomme et al. · IEEE Transactions on Electron Devices · 2005 · 36 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +12

Statistical model for stress-induced leakage current and pre-breakdown current jumps in ultra-thin oxide layers

R. Degraeve, B. Kaczer, F. Schuler et al. · 2002 · 25 citations

Unified Picture, Electrical Engineering, Semiconductor Device +14

Dynamics of threshold voltage instability in stacked high-k dielectrics: role of the interfacial oxide

L. Pantisano, E. Cartier, A. Kerber et al. · 2004 · 21 citations

Engineering, Interfacial Oxide, Defect Tolerance +18