K.P. MacWilliams - Concepedia

Author

K.P. MacWilliams

The Aerospace Corporation

Also Known As

K. P. MacWilliams, K.P. MacWilliams, Kenneth MacWilliams, Kenneth P. MacWilliams

Publications

888

Citations

H-Index

Concepts

All Affiliations

The Aerospace Corporation University of California, Los Angeles Micro Focus (United States)Stanford University Applied Materials (United States)

About

K.P. MacWilliams is an author at The Aerospace Corporation specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	811
2	Applied Physics	11	12	795
3	Electrical Engineering	10	10	655
4	Chemical Engineering	1	1	16
5	Computer Engineering	1	1	106

K.P. MacWilliams

Publications

811

Citations

H-Index

Page 1

	Year	Citations
Enhancement-mode quantum-well Ge/sub x/Si/sub 1-x /PMOS Deepak Kumar Nayak, J.C.S. Woo, J.S. Park, IEEE Electron Device Letters Semiconductor TechnologyQuantum ScienceElectrical EngineeringEngineeringPhysics	1991	191
High-mobility <i>p</i>-channel metal-oxide-semiconductor field-effect transistor on strained Si Deepak Kumar Nayak, J.C.S. Woo, J. S. Park, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsStrained Si Pmosfet	1993	160
Correlation of picosecond laser-induced latchup and energetic particle-induced latchup in CMOS test structures Steven C. Moss, S. D. LaLumondiere, J. Scarpulla, IEEE Transactions on Nuclear Science EngineeringVlsi DesignLaser-plasma InteractionBulk Cmos DevicesHigh-power Lasers	1995	106
Comparison of NMOS and PMOS hot carrier effects from 300 to 77 K Miryeong Song, K.P. MacWilliams, J.C.S. Woo IEEE Transactions on Electron Devices Room TemperatureElectrical EngineeringEngineeringHot Carrier DegradationHardware Reliability	1997	84
Improved hot-carrier resistance with fluorinated gate oxides K.P. MacWilliams, L. F. Halle, Thomas C. Zietlow IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringInterface State GenerationBias Temperature Instability	1990	52
High-mobility GeSi PMOS on SIMOX Deepak Kumar Nayak, J.C.S. Woo, G.K. Yabiku, IEEE Electron Device Letters Low-power ElectronicsGesi-simox DeviceElectrical EngineeringElectronic DevicesHigh-mobility Gesi Pmos	1993	51
New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures J. Wang-Ratkovic, R.C. Lacoe, K.P. MacWilliams, Electrical EngineeringCryogenic TemperaturesLow TemperaturesEngineeringHardware Reliability	2002	45
Effects of UV cure on glass structure and fracture properties of nanoporous carbon-doped oxide thin films David M. Gage, Jonathan F. Stebbins, Luming Peng, Journal of Applied Physics EngineeringNanoporous MaterialGlass-forming LiquidGlass MaterialFilm Connectivity	2008	34
Device physics and technology of complementary silicon MESFET's for VLSI applications K.P. MacWilliams, J.D. Plummer IEEE Transactions on Electron Devices EngineeringVlsi DesignSidewall SpacersIntegrated CircuitsSilicon On Insulator	1991	34
Production ready noval texture etching process for fabrication of single crystalline silicon solar cells K. Wijekoon, Timothy W. Weidman, S. Paak, EngineeringOrganic Solar CellSilicon On InsulatorPhotovoltaicsChemical Engineering	2010	16

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