B. Khan

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

Novel technique for <i>p</i>-type nitrogen doped ZnSe epitaxial layers

N. R. Taskar, B. Khan, D. Dorman et al. · Applied Physics Letters · 1993 · 64 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +13

A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier

J. Barth, W. Reohr, P. Parries et al. · IEEE Journal of Solid-State Circuits · 2008 · 59 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +15

Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors

B. Khan, R. Pandya · IEEE Transactions on Electron Devices · 1990 · 57 citations

Semiconductors, Materials Science, Electrical Engineering +14

An 800-MHz embedded DRAM with a concurrent refresh mode

T. Kirihata, P. Parries, David R. Hanson et al. · IEEE Journal of Solid-State Circuits · 2005 · 50 citations

Hardware Security, Non-volatile Memory, Engineering +12