H. Ono

A stacked capacitor technology with ECR plasma MOCVD (Ba,Sr)TiO/sub 3/ and RuO/sub 2//Ru/TiN/TiSi/sub x/ storage nodes for Gb-scale DRAMs

Shintaro Yamamichi, Pierre‐Yves Lesaicherre, Hisateru Yamaguchi et al. · IEEE Transactions on Electron Devices · 1997 · 46 citations

Non-volatile Memory, Engineering, Thin Film Process Technology +17

Ta–O phonon peaks in tantalum oxide films on Si

H. Ono, Yumiko Hosokawa, Keisuke Shinoda et al. · Thin Solid Films · 2001 · 32 citations

Materials Science, Materials Engineering, Engineering +5

Selective Etching of Phosphosilicate Glass with Low Pressure Vapor  HF

Heiji Watanabe, Shuhei Ohnishi, Itaru Honma et al. · Journal of The Electrochemical Society · 1995 · 32 citations

Materials Science, Glass-ceramic, Selective Etching +13

Interpolation and the Robinson property for logics not closed under the Boolean operations

H. Ono · Algebra Universalis · 1986 · 24 citations

Applied Logic, Computational Logic, Non-classical Logic +7

Hemispherical grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitor

Heiji Watanabe, T. Tatsumi, Shuhei Ohnishi et al. · IEEE Transactions on Electron Devices · 1995 · 20 citations

Engineering, In-situ Phosphorus, Grain Size +16