A 0.1-μm delta-doped MOSFET fabricated with post-low-energy implanting selective epitaxy

K. Noda, T. Tatsumi, T. Uchida, +3

IEEE Transactions on Electron Devices

Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsApplied Physics +8

NV-SRAM: a nonvolatile SRAM with backup ferroelectric capacitors

T. Miwa, J. Yamada, Hiroki Koike, +7

IEEE Journal of Solid-State Circuits

Hardware SecurityNon-volatile MemoryElectrical EngineeringMemory ArchitectureEngineering +9

Dual workfunction Ni-silicide/HfSiON gate stacks by phase-controlled full-sificidation (PC-FUSI) technique for 45nm-node LSTP and LOP devices

Kazutoshi Takahashi, Kei Manabe, Taeko Ikarashi, +6

Electrical EngineeringEngineeringNanoelectronicsNew Threshold-voltageSurface Science +10

Crystallized state, thickening process, and crystal transformation of single crystal of trans-1,4-polybutadiene

T. Tatsumi, Takashi Fukushima, Kenjiro Imada, +1

Journal of Macromolecular Science Part B

Crystal StructureEngineeringLiquid Crystalline ElastomerChemistrySoft Matter +15

A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology

Fumihiko Satô, T. Tatsumi, Takashi Hashimoto, +1

IEEE Transactions on Electron Devices

Sige BaseBottom SiElectrical EngineeringEpitaxial GrowthEngineering +10

Sub-20 ps ECL circuits with high-performance super self-aligned selectively grown SiGe base (SSSB) bipolar transistors

Fumihiko Satô, Takashi Hashimoto, T. Tatsumi, +1

IEEE Transactions on Electron Devices

Materials EngineeringSige BaseElectrical EngineeringEpitaxial GrowthEngineering +13

Low-resistance self-aligned Ti-silicide technology for sub-quarter micron CMOS devices

Tohru Mogami, Hitoshi Wakabayashi, Y. Saito, +3

IEEE Transactions on Electron Devices

Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringMicrofabrication +11

Ordered structure at Si/Ge interfaces

Nobuyuki Ikarashi, K. Akimoto, T. Tatsumi, +1

Physical Review Letters

Materials ScienceIncidence X-ray DiffractionGe Surface SegregationEngineeringPhysics +11

A selective epitaxial SiGe/Si planar photodetector for Si-based OEIC's

T. Tashiro, T. Tatsumi, Masataka Sugiyama, +2

IEEE Transactions on Electron Devices

Electrical EngineeringEngineeringPlanar StructureSuperlattice Absorption LayerApplied Physics +8

Synchrotron X-ray diffraction study of an interfacial super-structure: a-Si on Ge0.2Si0.8 (111)-5×5

K. Akimoto, J. Mizuki, T. Tatsumi, +2

Surface Science

Materials ScienceHigh-tc SuperconductivityEngineeringX-ray DiffractionApplied Physics +4