Weize Xiong

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs

Farah El Mamouni, En Xia Zhang, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2009 · 96 citations

Engineering, Radiation Oncology, Radiation Physics +16

BSIM-MG: A Versatile Multi-Gate FET Model for Mixed-Signal Design

Mohan V. Dunga, Chung-Hsun Lin, Darsen D. Lu et al. · 2007 · 51 citations

Engineering, Electrical Engineering, Electronic Materials +14

Radiation Dose Effects in Trigate SOI MOS Transistors

J.-P. Colinge, A. Orozco, J. Rudee et al. · IEEE Transactions on Nuclear Science · 2006 · 49 citations

Medicine, Electrical Engineering, Microelectronics +12

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Farah El Mamouni, S. K. Dixit, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2008 · 48 citations

Engineering, Electrical Engineering, Microelectronics +16

Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs

En Xia Zhang, Daniel M. Fleetwood, Farah El-Mamouni et al. · IEEE Transactions on Nuclear Science · 2010 · 28 citations

Engineering, Computer Engineering, Electrical Engineering +15