2007 · 51 citations · 2 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationIntegrated Circuit DesignMixed-signal Integrated Circuit DesignMixed-signal ModelingShort-channel EffectsCompact Device ModelingCurrentsField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMixed-signal Co-designMosfet Modeling
A novel surface-potential based multi-gate FET (MG-FET) compact model has been developed for mixed-signal design applications. For the first time, a MG-FET model captures the effect of finite body doping on the electrical behavior of MG-FETs. A unique field penetration length model has been developed to model the short channel effects in MG-FETs. A multitude of physical effects such as poly-depletion effect and quantum-mechanical effect (QME) have been incorporated. The expressions for terminal currents and charges are co-continuous making the model suitable for mixed-signal design. The model has been verified extensively with TCAD and experimental data.
2
Modeling Advanced FET Technology in a Compact Model
Mohan V. Dunga, C.-H. Lin, Xuemei Xi et al. · IEEE Transactions on Electron Devices · 2006 · 94 citations
Engineering, Electrical Engineering, Electronic Materials +16