Farah El Mamouni

Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs

Farah El Mamouni, En Xia Zhang, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2009 · 94 citations

Semiconductor Technology, Wider Finfets, Electrical Engineering +15

Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

S. Büchner, Nicolas J.-H. Roche, Jeffrey H. Warner et al. · IEEE Transactions on Nuclear Science · 2012 · 51 citations

Engineering, Measurement, Laser-plasma Interaction +16

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Farah El Mamouni, S. K. Dixit, Ronald D. Schrimpf et al. · IEEE Transactions on Nuclear Science · 2008 · 48 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Modeling the Radiation Response of Fully-Depleted SOI n-Channel MOSFETs

Ivan Sanchez Esqueda, Hugh Barnaby, Michael Lee McLain et al. · IEEE Transactions on Nuclear Science · 2009 · 36 citations

Device Modeling, Electrical Engineering, Engineering +10

Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors

D. K. Chen, Farah El Mamouni, X. J. Zhou et al. · IEEE Transactions on Nuclear Science · 2007 · 19 citations